Analysis of MC model & DD model on DG-MOSFET for different Gate length

SEEE DIGIBOOK ON ENGINEERING & TECHNOLOGY, VOL. 01, MAY 2018 pp. (25-27)
Abstract– In this brief an attempt has been made to estimate the effect of inter-valley scattering on device characteristic by comparing Monte Carlo model and Drift Diffusion model simulating on DG-MOSFET. It is observed that the MC simulation gives higher on current as compared to DD simulation, which is attributed reduced inter-valley scattering. Furthermore, it is observed that reduction in inter-valley scattering results in lower threshold (Vth). The effect of inter-valley scattering is more intense at scaled channel length (20nm). The improvement in on current and Vth enhances in MC simulation as compare to DD model with scaling down of channel length.
Index Terms – Monte Carlo (MC), Drift Diffusion (DD), DG-MOSFET, T-CAD;
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Saurabh Mittal, Ashutosh Nandi
School of VLSI Design and Embedded System
NIT Kurukshetra
Kurukshetra India
saurabhmittal111@gmail.com,
ashutosh.chl@nitkkr.ac.in

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